| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which has superior high-speed response characteristics, large light output, and small variation in the light output during electrification. SOLUTION: The light emitting diode uses a single quantum well as an active layer; and a p type Ga0.51In0.49P quantum well layer 13 and a p type (Al0.5Ga0.5)0.51In0.49P lower barrier layer 12 and a p type (Al0.5Ga0.5)0.51In0.49P upper barrier layer 14 on both its sides are all heavily doped with a p type dopant (Zn, Mg, Be, C) or n type dopant (Si, Se, Te) and a non-light-emission recoupling potential by the dopant is formed in the upper and lower barrier layers. Carriers injected into the quantum well layer 13 cause not only light- emission recoupling in the quantum well layer 13, but also non-light-emission recoupling by the interface between the upper and lower barrier layers 12 and 14, so the recoupling speed becomes very fast, so that the response characteristics are greatly improved. |
