发明名称 Method fabricating a polycrystalline silicon wafer.
摘要 A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.
申请公布号 EP0065373(A1) 申请公布日期 1982.11.24
申请号 EP19820302246 申请日期 1982.04.30
申请人 HOXAN CORPORATION 发明人 MAEDA, YASUHIRO HOXAN LABORATORY OF HOXAN CORP;YOKOYAMA, TAKASHI HOXAN LABORATORY OF HOXAN CORP;YAGIHASHI, SHINICHI HOXAN LABORATORY OF HOXAN CORP
分类号 C30B11/00 主分类号 C30B11/00
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