发明名称 |
Semiconductor memory |
摘要 |
A semiconductor memory includes memory cells each respectively provided with a flip-flop circuit in which a pair of transistors is included, the flip-flop circuit being connected to a pair of bit lines and to a pair of word lines. The semiconductor memory further includes a pair of switching transistors connected to the pair of bit lines. One of the pair of switching transistors is turned ON while the other is turned OFF when they receive high and low potentials according to write data at the time of a write operation so as to flow write current from a memory cell to a voltage source via one of the pair of bit lines and one of the pair of switching transistors.
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申请公布号 |
US4464735(A) |
申请公布日期 |
1984.08.07 |
申请号 |
US19810329922 |
申请日期 |
1981.12.11 |
申请人 |
FUJITSU LIMITED |
发明人 |
TOYODA, KAZUHIRO;SUGO, YASUHISA;YAMADA, KATUYUKI |
分类号 |
G11C11/41;G11C11/414;G11C11/416;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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