| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is thinner than a conventional one and at the same time has improved reliability in the electric connection between a semiconductor device and a wiring board, and to provide a method for manufacturing the semiconductor device by less number of processes than a conventional one. SOLUTION: This semiconductor device 201 has a polyimide film 202 (an insulating resin film) where a through hole 202a for stud bumps is formed, a wiring pattern 203 that is formed on one surface of the polyimide film 202 and covers the opening of the through hole 202a for stud bumps at least on one surface, a first semiconductor device 206 that is subjected to flip-chip connection onto the wiring pattern 203, a second semiconductor device 209 that is subjected to the flip-chip connection to the other surface side of the polyimide film 202 so that the second semiconductor chip is electrically connected to the wiring pattern 203 via the through hole 202a for stud bumps, and a soldering bump 205 (an external connection terminal). |
