发明名称 |
METHOD OF MAKING RESIST PATTERN, METHOD OF PATTERNING THIN FILM AND METHOD OF MANUFACTURING MICRODEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of making resist patterns for forming fine patterning thin films and a method of patterning the thin films using the same. SOLUTION: After a thin film 2 to be milled is formed on a substrate 1, a polymethyl glutarimide layer 3 and a photoresist layer 4 of a positive type are formed by coating application. The photoresist layer 4 is thereafter exposed through a mask 5 and is developed to form preresist patterns 6. The preresist patterns 6 are subjected to ashing treatment, by which the narrowed resist patterns 7 are obtained. The thin film 2 to be milled is then subjected to milling treatment through the resist patterns 7 as a mask, by which the patterning thin films 9 are obtained. |
申请公布号 |
JP2002116557(A) |
申请公布日期 |
2002.04.19 |
申请号 |
JP20000305683 |
申请日期 |
2000.10.05 |
申请人 |
TDK CORP |
发明人 |
UEJIMA SATOSHI;WATANABE HISAYOSHI |
分类号 |
G03F7/004;G03F7/022;G03F7/11;G03F7/26;G03F7/38;G03F7/40;G11B5/31;H01L21/027;H01L21/033;H01L43/12 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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