发明名称 METHOD OF MAKING RESIST PATTERN, METHOD OF PATTERNING THIN FILM AND METHOD OF MANUFACTURING MICRODEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of making resist patterns for forming fine patterning thin films and a method of patterning the thin films using the same. SOLUTION: After a thin film 2 to be milled is formed on a substrate 1, a polymethyl glutarimide layer 3 and a photoresist layer 4 of a positive type are formed by coating application. The photoresist layer 4 is thereafter exposed through a mask 5 and is developed to form preresist patterns 6. The preresist patterns 6 are subjected to ashing treatment, by which the narrowed resist patterns 7 are obtained. The thin film 2 to be milled is then subjected to milling treatment through the resist patterns 7 as a mask, by which the patterning thin films 9 are obtained.
申请公布号 JP2002116557(A) 申请公布日期 2002.04.19
申请号 JP20000305683 申请日期 2000.10.05
申请人 TDK CORP 发明人 UEJIMA SATOSHI;WATANABE HISAYOSHI
分类号 G03F7/004;G03F7/022;G03F7/11;G03F7/26;G03F7/38;G03F7/40;G11B5/31;H01L21/027;H01L21/033;H01L43/12 主分类号 G03F7/004
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