PLASMA PROCESSING DEVICE, PLASMA PROCESSING SYSTEM AND PERFORMANCE CONFIRMING SYSTEM, AND INSPECTION METHOD

摘要

PROBLEM TO BE SOLVED: To uniformly enable conducting a plasma processing by taking into consideration the electrical high frequency characteristics in the chamber as a whole that performs the plasma processing. SOLUTION: The plasma processing device comprises a plasma chamber 75, that has electrodes 4, 8 for exciting plasma, a high-frequency power source 1 connected with this electrode 4, and a matching circuit 2A for obtaining impedance matching between the plasma chamber 75 and the high-frequency power source 1. 26 times of the plasma electrode capacity Ce between the electrodes 4, 8 is established to be in a range larger than the capacity (loss capacity) Cx between the electrode 4 and each grounding potential part that is grounded in series flow.