| 发明名称 |
Thin film semiconductor device and process for producing thereof |
| 摘要 |
A thin film semiconductor device comprising a semiconductor layer and an electrically conductive thin film which are formed by an alternate current plating method, and a process for producing thereof.
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| 申请公布号 |
US5270229(A) |
申请公布日期 |
1993.12.14 |
| 申请号 |
US19920874214 |
申请日期 |
1992.04.27 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIHARA, SHIN-ICHIRO |
| 分类号 |
H01L21/208;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/336;H01L21/283;H01L27/12 |
主分类号 |
H01L21/208 |
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