发明名称 |
Semiconductor laser device and a method for the manufacture thereof |
摘要 |
A semiconductor laser device is provided which is designed to prevent end surface optical damage, thereby permitting an increase in the output of the semiconductor laser. To achieve this, an active layer at the light emitting end surface portion of the semiconductor laser device is recessed inwardly by a distance between 50 nm and 300 nm (depending on the amount of etching) from the end surfaces of the crystal layers lying on both sides of the active layer. The recess serves to improve the heat dissipation of the active layer portion. This results in improving the amount of light output of the semiconductor laser which is possible without causing optical damage. A method for making the device is also provided. This method permits achieving the above-noted advantages simply by adding an etching step to the conventional semiconductor laser fabrication process, without requiring special equipment or technique.
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申请公布号 |
US5608750(A) |
申请公布日期 |
1997.03.04 |
申请号 |
US19940282312 |
申请日期 |
1994.07.29 |
申请人 |
HITACHI, LTD. |
发明人 |
NAKATSUKA, SHINICHI;UCHIDA, KENJI;SAGAWA, MISUZU;KIKUCHI, SATORU |
分类号 |
H01S5/10;H01S5/16;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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