发明名称 |
THYRISTOR DUAL NORMALEMENT PASSANT BLOCABLE PAR UNE IMPULSION APPLIQUEE SUR LA GACHETTE |
摘要 |
The invention concerns a component constituting a dual thyristor, normally conducting and capable of being blocked by a voltage pulse on the control electrode, comprising a thyristor (Th), a first depletion MOS transistor (MD1) whose grid is coupled with the source connected between the anode gate (GA) and the cathode (K) of the thyristor, and second enrichment MOS transistor (ME2) whose grid is connected to a control terminal (G).
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申请公布号 |
FR2754392(A1) |
申请公布日期 |
1998.04.10 |
申请号 |
FR19960012323 |
申请日期 |
1996.10.04 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS |
发明人 |
SANCHEZ JEAN LOUIS;JALADE JEAN;LAUR JEAN PIERRE;FOCH HENRI |
分类号 |
H01L29/744;H01L29/74;H01L29/745;H01L29/749;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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