| 摘要 |
FIELD: integrated circuit technology with high degree of integration. SUBSTANCE: method of formation of insulation of integrated circuits involves formation of first layer of silicon nitride on surface of silicon substrate, deposition of silicon oxide, opening of windows in first layer of silicon nitride and silicon oxide, oxidation of open sections of silicon substrate creation of U-shaped grooves in oxidized sections surrounding areas of integrated circuits, coating of walls of grooves with layer of silicon oxide, deposition of second layer of silicon nitride, filling of grooves with polycrystalline silicon, oxidation of polycrystalline silicon in grooves. EFFECT: diminished level of structural defects in insulated areas of silicon, increased output of good integrated circuits. 2 dwgr
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