| 摘要 |
PROBLEM TO BE SOLVED: To improve electro-migration resistance of a wiring structure of a semiconductor device, without significantly changing the wiring design. SOLUTION: A semiconductor device has a wiring 22 which is used at a first current density. The wiring 22 has at least two conductor bands 26, 28 made of a first material. The cross-sectional area of each of the conductor bands 26, 28 is changed by a length no greater than a critical length Lc given by Lc=(Δσ.Ω.a)/(j.e.ρ.Z*), on the basis of the first current density. In this case, j represents the first current density, e represents the elemental charge,ρrepresents the specific resistance of the first material, Z* represents effective charge,Δσrepresents the difference in stresses generated in the conductor bands,Ωrepresents atomic volume of the first material, and 'a' represents the lattice constant of the first material. At a portion where the cross-sectional area is changed, the conductor bands 26, 28 are connected with each other via a connection conductor band 29.
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