发明名称 SUBSTRATE VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To make the column address strobe signal applicable for all the term by providing NAND circuit which outputs a product of the first clock input signal and a delayed signal of the first clock input signal and further an inverter circuit and also providing a NOR circuit which inputs an output signal of the inverter circuit, the second clock input signal and a detected signal of EDO mode. SOLUTION: A pump circuit into which a first page mode output signal is inputted and another pump circuit into which is inputted a signalϕedo activated in a short cycle of EDO mode are provided in parallel. The signal edo generating circuit generates, from the column address strobe signal/CAS, an output signal G through a delay circuit 7, a NAND circuit 5 and an inverter circuit 6, and further generates the signal edo through NOR circuit 3 from the output signal G, a raw address strobe signal/RAG and a detected signal E of EDO mode. Thereby, the floating-up of substrate voltage which generates at the time of short cycle of EDO is prevented.
申请公布号 JPH10340580(A) 申请公布日期 1998.12.22
申请号 JP19970147881 申请日期 1997.06.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 JINBO SHINICHI
分类号 G11C11/407;G11C11/401;G11C11/408;H01L21/822;H01L27/04;(IPC1-7):G11C11/407 主分类号 G11C11/407
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