SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To produce excellent withstand voltage characteristics of an oxide film by regulating the density of crystal originated particles(COP) having a specific size or above of a silicon single crystal, produced by a Czochralski method and measured with a surface foreign material meter to a specific number or below over the whole surface and the dislocation cluster density to a specific value or below. SOLUTION: This silicon single crystal wafer is obtained by regulating the density of COP having >=0.11μm size measured by a surface foreign matter meter to <=104 particles/cm<3> over the whole surface of the wafer and the dislocation cluster density to <=200 clusters/cm<3> over the whole surface of the wafer and is a silicon single crystal prepared by growing a crystal under conditions so as to provide <=0.8 mm/min crystal growth rate and further growing the crystal under conditions so as to afford <=0.15 mm<2> / deg.C.min V/G when the crystal growth rate is V mm/min and the crystallization temperature gradient in the interface between a silicon melt and the crystal is G deg.C/mm. The cooling rate in a region from the melting point of the silicon to 1,200 deg.C when growing the crystal is preferably <=1 deg.C/min.