| 摘要 |
<p>The invention relates to an illumination system for scanning lithography with wavelengths ≤ 193 nm, particularly EUV lithography, for the illumination of a slit, comprising a light source, at least one field mirror or one field lense, an image plane. <??>The invention is characterized in that the field mirror(s) or the field lens(es) is (are) shaped so that the illuminated field is distorted in the image plane perpendicular to the scanning direction. <IMAGE></p> |
