发明名称 |
Method for making InP heterostructure devices |
摘要 |
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
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申请公布号 |
US6165859(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19990255845 |
申请日期 |
1999.02.23 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
HAMM, ROBERT ALAN;KOPF, ROSE FASANO;RYAN, ROBERT WILLIAM;TATE, ALARIC |
分类号 |
H01L21/331;H01L29/45;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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