发明名称 |
Electrostatic discharge protection device with monolithically formed resistor-capacitor portion |
摘要 |
A semiconductor device comprising a silicon-on-insulator (SOI) substrate including a base substrate, an insulator layer, and a silicon layer, a trench capacitor including at least one trench formed in the silicon-on-insulator substrate and extending through the silicon layer and the insulator layer to the base substrate, and a resistive element formed in the silicon-on-insulator substrate. The capacitor and resistor structure provide an R-C circuit which may be used in triggering an electrostatic discharge (ESD) protection device.
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申请公布号 |
US6384452(B1) |
申请公布日期 |
2002.05.07 |
申请号 |
US20000617687 |
申请日期 |
2000.07.17 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP |
发明人 |
CHITTIPEDDI SAILESH;SMOOHA YEHUDA |
分类号 |
H01L27/04;H01L21/762;H01L21/822;H01L27/02;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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