| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of the conventional semiconductor integrated circuit that the electrostatic breakage, is caused by conducting the electrostatic current to an internal cell connected directly with a VSS cell before the electrostatic current escapes to the outside by an electrostatic protecting circuit, when the electrostatic having an excess voltage is applied to a VSS terminal. SOLUTION: This circuit is provided with bypass circuits VIA1 to VIA4, ALB1, ALA2 and ALB2, in which an electrostatic applied to a VSS terminal is made to bypass to an upper wiring layer and make an excess electrostatic only, to making it selectively escape to the outside by an electrostatic protecting circuit 10.
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