| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is small in area, small in leakage current and good in process controllability. SOLUTION: A semiconductor device is constituted in a structure that a first deposited oxide film 108 and a polycrystalline layer 109, which is a reduced film, are formed in order on a substrate formed with a MISFET. After that, a collector aperture 110 having a width W3 larger than the width W2 of an active region is formed in the film 108 and the layer 109 in an HBT formation region Rbp. Then, an Si1-xGex layer 111 is epitaixally grown on the substrate extending from the surface, which is exposed through a collector aperture 110 formed in the Si substrate 100, of the substrate 100 to the layer 109. The single crystal Si1-xGex layer 111 is formed on the part of the surface, which is exposed through the aperture 110, of the substrate 100 and the uniform polycrystalline Si1-xGex layer 111 is formed on the layer 109 which is the reduced film.
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