发明名称 |
Column redundancy circuit for semiconductor memory |
摘要 |
The present invention relates to a column redundancy circuit for a semiconductor memory which can facilitate a high integration semiconductor circuit whose memory array is divided into a plurality of array units to be properly operated at a high frequency. The plurality of array units in the memory array include a plurality of normal memory cells and a plurality of redundancy memory cells. The normal data stored in the plurality of normal memory cells and the redundancy data stored in the plurality of redundancy memory cells are outputted through a local normal input/output line and a local redundancy input/output line, respectively. The column redundancy unit outputs a redundancy enable signal according to a column address, a row address, and a state of a fuse. The normal data stored in the plurality of normal memory cells or the redundancy data stored in the plurality of redundancy memory cells is selected according to a logical state of the redundancy enable signal, and outputted to a main amplifier via a global input/output line.
|
申请公布号 |
US6343037(B1) |
申请公布日期 |
2002.01.29 |
申请号 |
US20000625642 |
申请日期 |
2000.07.25 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK SAN HA;KIM JU HAN;PYEON HONG BEOM |
分类号 |
G11C11/407;G11C29/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/407 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|