发明名称 MEMORY SYSTEM
摘要 PROBLEM TO BE SOLVED: To avoid trouble due to a hardware fault which fixes a memory cell having a defect in a high-resistance state or a low resistance state. SOLUTION: This memory system 20 comprises: a memory cell array 28; a write circuit 30 structured so as to write the memory cells 32 in the array 28; and a control circuit 24 structured so as to control the write circuit 30 to receive data to supply the coded received data 130 coincident with fault patterns 110 and 132 of the array 28 and to write the encoded received data 130 in fault addresses 108 of the fault patterns 110 and 132 of the array 28. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004362587(A) 申请公布日期 2004.12.24
申请号 JP20040166593 申请日期 2004.06.04
申请人 HEWLETT-PACKARD DEVELOPMENT CO LP 发明人 VAN BROCKLIN ANDREW L;SMITH KENNETH;ELDREDGE KENNETH JAMES;FRICKE PETER JAMES
分类号 G06F12/16;G11C11/15;G11C29/04;(IPC1-7):G06F12/16;G11C29/00 主分类号 G06F12/16
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