WIRING SUBSTRATE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR PACKAGE

摘要

PROBLEM TO BE SOLVED: To provide a wiring substrate for a semiconductor package in which two types of terminals having different specifications called terminals for W/B bonding and FC bonding are arranged at a narrow pitch with good accuracy on one surface, and in which one surface side is formed flatly, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the wiring substrate includes steps of electrolytically plating by using a first resist 120 as a mask in accordance with the shape of the first terminal on the one surface of the Cu plate 110 made into a supporting substrate; forming an Ni layer 131 and an Au layer 132 electrolytically plating by using a second resist 125 as a mask in accordance with the forming region of the plating layer for the first terminal the second terminal and a wiring shape after the first resist is removed; forming an Ni layer 140 and a Cu layer 150; forming N-layer multilayer wiring layers in the state that the wiring layers are connected therebetween, after the second terminal section and the first wiring 150 are formed; further electrolytically plating the Cu plate as a power supply layer, sequentially forming the Ni layer, the Au layer selectively on the region for forming the terminal section of the N-th wiring layer; removing the Cu plate by etching; and etching the Ni layer to expose the Au layer. COPYRIGHT: (C)2005,JPO&NCIPI