发明名称 LEVEL SHIFTING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a level shifting circuit whose operation speed is not influenced by variation in low-potential power source voltage. SOLUTION: A low-threshold transistor MN7 is used as an NMOS transistor driving a high-threshold transistor MP5 between high-threshold transistors MP5 and MN5 of inverter constitution connected between a high-potential power source HiVDD and a ground VSS, and this transistor MN7 is driven with an input voltage varying within the voltage of a low-potential power source LoVDD to securely drive the transistor MN7. Further, a high-threshold transistor MN4 and a low-threshold transistor NM6 are connected in series between the transistors MP4 and MN7, so that a voltage applied to the transistor MN6 when the transistor MP4 is OFF does not exceed the rating. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006229526(A) 申请公布日期 2006.08.31
申请号 JP20050040097 申请日期 2005.02.17
申请人 KAWASAKI MICROELECTRONICS KK 发明人 SHIMATANI TAKESHI
分类号 H03K19/0185 主分类号 H03K19/0185
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