| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem associated with the conventional technology that the attachment to an opening of a hard mask is suppressed by a gas containing C and F added to a processing gas, further the gas containing C and F has to be added in addition to the original etching gas in order to suppress the attachment, and the addition amount and addition timing of the gas containing C and F has to be properly controlled since the gas containing C and F diminishes the thickness of the hard mask; in other words, when forming a hole or trench having the opening size of 0.2μm or less and has a high aspect ratio, the deposits in the opening of the mask has to be removed or its growth has to be suppressed during etching. SOLUTION: In the etching method which uses plasmas, an Si layer 202 is etched using an SiO<SB>2</SB>film 201 having openings 201A with a side wall having a bowing profile as the hard mask. COPYRIGHT: (C)2006,JPO&NCIPI
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