| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-output semiconductor laser which allows the formation of a film in a short time and has a superior controllability for reflectivity and is not reduced in reliability and has a higher reflectivity than the conventional one. SOLUTION: The high-output semiconductor laser includes a semiconductor multilayered portion 2 formed by stacking semiconductor layers formed on a semiconductor substrate 1, and serves for lasing; a first end face film 3 formed on one end of the semiconductor multilayered portion 2 which is a light emission surface; and a second end face film 4 and a metal film 5 which are formed on the other end of the semiconductor multilayered portion 2. COPYRIGHT: (C)2006,JPO&NCIPI
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