EPITAXIAL WAFER FOR FIELD EFFECT TRANSISTOR AND FIELD EFFECT TRANSISTOR MANUFACTURED FROM IT

摘要

PROBLEM TO BE SOLVED: To enhance the channel electron mobility and sheet carrier concentration of an epitaxial wafer for a field effect transistor or the field effect transistor by devising the structure between an InGaAs channel layer and an AlGaAs carrier supply layer. SOLUTION: In the epitaxial wafer for the field effect transistor having at least the AlGaAs carrier supply layer and the InGaAs channel layer on a half-insulation substrate, a graded InGaAs spacer layer in which an In composition is changed gradually is inserted in the form which touches the InGaAs channel layer between the InGaAs channel layer and the AlGaAs carrier supply layer, the structure that the In composition of the graded InGaAs spacer layer is changed in the direction which keeps away from the InGaAs channel layer from the channel In composition to 0, is formed. COPYRIGHT: (C)2006,JPO&NCIPI