| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein it was difficult to separate a low-resistance silicide layer in a semiconductor device using a silicide technique. SOLUTION: In heat treatment for forming the silicide layer, the low-resistance silicide layer can be formed without any separation by collectively and continuously performing an alloying process and a resistance-decreasing process in an inert gas atmosphere. Even if the temperature gradient of a first temperature changing process is increased, the separation of the silicide layer can be prevented by reducing the temperature gradient of a second temperature changing process. COPYRIGHT: (C)2006,JPO&NCIPI
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