| 摘要 |
A semiconductor sensor 1 includes: a frame 21 having an opening; an actuation diaphragm 16 provided inside the frame 21 in a spaced-apart relationship with respect to the frame 21; a plurality of flexible beams 19 a, 19 b provided to interconnect the frame 21 and the actuation diaphragm 16, each of the flexible beams 19 a, 19 b having piezo resistance elements 30 a, 30 b, 30 c thereon; metallic wiring lines 33 provided on one major surfaces of the respective flexible beams 19 a, 19 b for connecting each of the piezo resistance elements 30 a, 30 b, 30 c to each other; and a plurality of thermal stress absorbing portions provided on the other major surfaces of the respective flexible beams 19 a, 19 b for absorbing thermal stresses developed in the beams 19 a, 19 b due to the difference of coefficients of thermal expansion between the respective beams 19 a, 19 b and the corresponding metallic wiring lines 33.
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