发明名称 METHOD FOR GENERATING MASK LAYOUT DATA FOR LITHOGRAPHY SIMULATION AND OPTIMUM MASK LAYOUT DATA FOR PHOTOMASK, AND RELATED DEVICE AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a simple method for generating mask layout data for a lithography mask which keeps a new layout very similar to a mask manufactured by using original data at a low cost. SOLUTION: The method for generating the mask layout data for, specially, lithography simulation is described. The original data (12) defining an original layout (10) are prescribed. New data (54) are automatically computed (34) according to the original data. The new data (54) are computed (34) from the mask manufactured according to the layout according to a rule based upon the deviation of the layout shape (38, 40). This procedure is followed to evade complicated simulation at a method stage of a manufacturing process.
申请公布号 JP2002140381(A) 申请公布日期 2002.05.17
申请号 JP20010271402 申请日期 2001.09.07
申请人 INFINEON TECHNOLOGIES AG 发明人 SEMMLER ARMIN;HAFFNER HENNING;FRIEDRICH CHRISTOPH
分类号 G03F1/00;G03F1/36;G03F7/20;G06F17/50;H01L21/027;H01L21/66 主分类号 G03F1/00
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