发明名称 FLOATING ZONE MELTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a focused infrared-heating type floating zone melting device having a low temperature gradient in the circumferential direction of a sample at melting part and a steep temperature gradient in the perpendicular direction and capable of obtaining a sufficiently high maximum reaching temperature and capable of forming a stable melting state. SOLUTION: In a four elliptical mirror type floating zone melting device in which reflecting mirrors 2 of a rotary elliptic face are placed opposite to each other on the orthogonal axes, an eccentricity of the reflecting mirrors 2 of the rotary elliptic face is set in 0.4-0.65 and a ratio of a depth of the reflecting mirrors 2 of the rotary elliptic face to an opening part diameter is set in 0.38-0.75. In addition, a glass mirror is used as the reflecting mirrors 2 of a rotary elliptic face. A large diameter single crystal can be grown by arranging the reflecting mirrors 2 of the rotary elliptic face so that a straight line from one focus to another focus inclines downward and by irradiating the sample with infrared light reflected at a reflection surface from diagonally upward. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007099602(A) 申请公布日期 2007.04.19
申请号 JP20050295620 申请日期 2005.10.07
申请人 CRYSTAL SYSTEM:KK 发明人 SHINDO ISAMU
分类号 C30B13/24;F21S2/00;F21V7/00;F21Y101/00 主分类号 C30B13/24
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