| 摘要 |
A thin film transistor array substrate is provided. A plurality of shield lines are disposed between the lead lines in a peripheral circuit region of the substrate. A connecting line connected to the shield lines is also disposed in peripheral circuit region of the substrate. The shield lines and the connecting line are formed of a metal layer so that light leakage between the lead lines of a source/drain layer or a gate layer is reduced. Furthermore, the line widths in the connecting portions of the shield lines connected to the connecting lines are smaller than the distance between the lead lines. Therefore, if a short happens between the lead lines and the shield lines, repair may be performed by cutting the connection portions between the shield lines and the connecting lines.
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