发明名称 |
Solid-state imaging device |
摘要 |
A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
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申请公布号 |
US2008067565(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
US20070981002 |
申请日期 |
2007.10.30 |
申请人 |
SONY CORPORATION |
发明人 |
ABE TAKASHI;SUZUKI RYOJI;MABUCHI KEIJI;IIZUKA TESTUYA;UENO TAKAHISA;HARUTA TSUTOMU |
分类号 |
H01L27/14;H01L27/146;H01L31/10;H04N5/335;H04N5/361;H04N5/369;H04N5/374 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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