| 摘要 |
3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film ( 2 ) made of a metal element on Si substrate ( 1 ), placing this Si substrate ( 1 ) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate ( 1 ) and C in plasma dissolve at supersaturation into metal liquid particle ( 3 ), 3C-SiC nanowhisker ( 4 ) grows on the metal liquid particles ( 3 ), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles ( 3 ) at whisker root take in Si from Si substrate ( 1 ) and penetrate into Si substrate ( 1 ).
|
