NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having large light emitting output and a narrow half width of the light emitting spectrum. SOLUTION: An active layer 95 has a quantum well structure. A first p-type clad layer 96a of a p-type clad layer 96 provided on the layer 95 is formed of a p-type nitride semiconductor containing an aluminum and a gallium and a second p-type clad layer 96b is formed of the similar p-type nitride semiconductor and having larger band gap than that of the first p-type clad layer 96b.