发明名称 Immersion Lithography Technique And Product Using A Protection Layer Covering The Resist
摘要 In an immersion lithography method, the photoresist layer is provided with a shield layer to protect it from degradation caused by contact with the immersion liquid. The shield layer is transparent at the exposure wavelength and is substantially impervious to the immersion liquid. The shield layer can be formed of a material which can be removed using the same developer as is used to develop the photoresist layer after exposure.
申请公布号 US2008171285(A1) 申请公布日期 2008.07.17
申请号 US20050595762 申请日期 2005.02.15
申请人 FREESCALES SEMICONDUCTOR, INC. 发明人 PATTERSON KYLE;STROZEWSKI KIRK
分类号 G03C1/00;G03F7/09;G03F7/11;G03F7/20;G03F7/26 主分类号 G03C1/00
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