发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.
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申请公布号 |
US2008318408(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080142858 |
申请日期 |
2008.06.20 |
申请人 |
YAMADA NOBUHIDE;MATSUYAMA HIDETO;MIYAJIMA HIDESHI |
发明人 |
YAMADA NOBUHIDE;MATSUYAMA HIDETO;MIYAJIMA HIDESHI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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