FINFET doping method with curvilnear trajectory implantation beam path

摘要

A method to implant dopants onto fin-type field-effect-transistor (FINFET) fin surfaces with uniform concentration and depth levels of the dopants and the resulting device are disclosed. Embodiments include a method for pulsing a dopant perpendicular to an upper surface of a substrate, forming an implantation beam pulse; applying an electric or a magnetic field to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse; and implanting the dopant onto a sidewall surface of a target FINFET fin on the upper surface of the substrate via the curvilinear trajectory path of the implantation beam pulse.

主权项

1. A method comprising:
pulsing a dopant perpendicular to an upper surface of a substrate, forming an implantation beam pulse; applying an electric field and a magnetic field simultaneously, at a target fin of a fin-type field effect transistor (FINFET), to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse; varying the curvilinear trajectory path of the implantation beam pulse by varying a direction of the electric field and the magnetic field; and implanting the dopant onto a sidewall surface of the target FINFET fin on the upper surface of the substrate via the curvilinear trajectory path of the implantation beam pulse.