| 摘要 |
PROBLEM TO BE SOLVED: To obtain an atmospheric plasma enhanced chemical vapor deposition system in which reaction gas distribution can be made uniform between a target and a substrate placed in a narrow gap of several mm or less, under a relatively high gas pressure close to the atmospheric pressure.SOLUTION: An atmospheric plasma enhanced chemical vapor deposition system deposits a film on a processed member by irradiating the processed member, mounted on the surface of a ground electrode stage 2 on the power application electrode 12 side, with plasma generated under the pressure of a reaction gas containing hydrogen having a pressure between 100 Pa and the atmospheric pressure, in the gap between a voltage application electrode 12 having a solid target 13 and connected with a power supply, and a ground electrode stage 2 disposed to face the power application electrode 12 and grounded. A through hole 21 for introducing the reaction gas is provided in the surface of the solid target 13. |
