Substrate processing apparatus

摘要

The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.

主权项

1. A substrate processing apparatus comprising:
a process vessel configured to process a substrate; a process gas supply system configured to supply a process gas into the process vessel; an inert gas supply system configured to supply an inert gas into the process vessel; a seal cap configured to close an opening of the process vessel; and a controller configured to control the process gas supply system and the inert gas supply system, wherein the inert gas supply system comprises:
a first ejection part installed at a center portion of the seal cap and configured to eject the inert gas;a second ejection part installed to face an inner wall surface of the opening at an end portion of the process vessel and configured to eject the inert gas;a first supply pipe configured to supply the inert gas to the first ejection part;a second supply pipe configured to supply the inert gas to the second ejection part;a third supply pipe configured to supply the inert gas to the first pipe and the second pipe;a flow rate controller installed at the third supply pipe and configured to control a flow rate of the inert gas; anda throttle unit installed at at least one of the first supply pipe and the second supply pipe and configured to throttle a channel where the inert gas flows, and wherein the controller is configured to control the process gas supply system and the inert gas supply system to: supply the inert gas having the flow rate thereof controlled by the flow rate controller to the first supply pipe and the second supply pipe through the third supply pipe; eject the inert gas supplied to the first supply pipe into the process vessel through the first ejection part installed at the center portion of the seal cap; and eject the inert gas supplied to the second supply pipe to the inner wall surface of the opening at the end portion of the process vessel through the second ejection part while the process gas is supplied into the process vessel.