Semiconductor device having structure capable of suppressing oxygen diffusion and method of manufacturing the same

摘要

A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.

主权项

1. A semiconductor device comprising:
a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, source and drain electrodes, and an interlayer insulation film configured to cover the gate electrode and the source and drain electrodes and formed with contact holes configured to lead the gate electrode and the source and drain electrodes, the contact holes being filled with a conductive material to thus form contacts, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion, wherein a boundary between the gate dielectric film and the gate electrode is also formed with the F-terminated surface, wherein boundaries between the source and drain electrodes and the contacts and boundaries between the source and drain electrodes and the interlayer insulation film are also formed with the F-terminated surface, and wherein at least one of a boundary between the interlayer insulation film and the substrate, boundaries between the contacts and the interlayer insulation film, a boundary between the interlayer insulation film and the gate dielectric film, and a boundary between the interlayer insulation film and the gate electrode is also formed with the F-terminated surface.