Semiconductor device and semiconductor device manufacturing method

摘要

In aspects of the invention, an n-type epitaxial layer that forms an n− type drift layer is formed on the upper surface of an n-type semiconductor substrate formed by being doped with a high concentration of antimony. A p-type anode layer is formed on a surface of the n− type drift layer. An n-type contact layer is formed with an impurity concentration in the same region as the impurity concentration of the n-type cathode layer, or higher than the impurity concentration of the n-type cathode layer, on the lower surface of the n-type cathode layer. A cathode electrode is formed so as to be in contact with the n-type contact layer. The n-type contact layer is doped with phosphorus and, without allowing complete recrystallization using a low temperature heat treatment of 500° C. or less, lattice defects are allowed to remain.

主权项

1. A semiconductor device manufacturing method, the method comprising:
a step of grinding the back surface of a first conductivity type semiconductor substrate formed by being doped with antimony, thereby reducing the thickness of the semiconductor substrate; a step of ion implanting a first conductivity type impurity into the ground back surface of the semiconductor substrate; a step of activating the first conductivity type impurity implanted into the semiconductor substrate by carrying out a heat treatment for 30 minutes or more at a temperature of 340° C. or more, 500° C. or less, thereby forming a first conductivity type contact layer in a surface layer of the back surface of the semiconductor substrate; and a step of forming a first electrode in contact with the contact layer, wherein the first conductivity type impurity is phosphorus, wherein lattice defects remain in the step of activating the first conductivity type impurity, and wherein in the step of activating the first conductivity type impurity, both a region of higher concentration than that of the semiconductor substrate, and a region of lower concentration region than that of the semiconductor substrate are formed.