发明名称 Liquid processing method and liquid processing apparatus
摘要 A surface of a substrate can be dried cleanly after liquid-processed by a liquid processing method and a liquid processing apparatus. The liquid processing method includes forming a liquid film of a rinse solution on an entire surface of a substrate having thereon a hydrophobic region by supplying, onto a central portion of the surface of the substrate, the rinse solution for rinsing a chemical liquid supplied on the substrate at a first flow rate while rotating the substrate at a first rotation speed; forming a stripe-shaped flow of the rinse solution on the surface of the substrate by breaking the liquid film formed on the entire surface of the substrate; and moving a discharge unit configured to supply the rinse solution toward a periphery of the substrate until the stripe-shaped flow of the rinse solution is moved outside the surface of the substrate.
申请公布号 US9412627(B2) 申请公布日期 2016.08.09
申请号 US201213443057 申请日期 2012.04.10
申请人 TOKYO ELECTRON LIMITED 发明人 Nonaka Jun
分类号 B08B3/04;H01L21/67;H01L21/02 主分类号 B08B3/04
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A liquid processing apparatus comprising: a substrate rotation unit configured to hold and rotate a substrate having thereon a hydrophobic region; a rinse solution discharge unit configured to supply, onto the substrate held by the substrate rotation unit, a rinse solution for rinsing a chemical liquid supplied on the substrate, the rinse solution discharge unit including a first rinse solution discharge unit configured to supply the rinse solution at a first flow rate and a second rinse solution discharge unit configured to supply the rinse solution at a second flow rate; and a programmable controller configured to control the substrate rotation unit and the rinse solution discharge unit to supply the rinse solution on a central portion of a surface of the substrate from the first rinse solution discharge unit at the first flow rate while rotating the substrate by the substrate rotation unit at a first rotation speed; supply the rinse solution from the second rinse solution discharge unit at the second flow rate lower than the first flow rate while rotating the substrate by the substrate rotation unit at a second rotation speed lower than the first rotation speed; and move the rinse solution discharge unit toward a periphery of the substrate while the rinse solution is supplied from the second rinse solution discharge unit and is not supplied from the first rinse solution discharge unit, wherein the programmable controller is programmed to control the second flow rate and the second rotation speed such that the rinse solution supplied at the second flow rate flows in a stripe shape on the surface of the substrate from the central portion of the substrate toward the periphery thereof, and an opening diameter of the second rinse solution discharge unit is set to be smaller than an opening diameter of the first rinse solution discharge unit.
地址 Tokyo JP