SCINTILLATION DETECTOR FOR DETECTION OF IONISING RADIATION

摘要

The scintillation detector for the detection of ionising radiation, especially electron, X-ray or particle radiation, including a monocrystalline substrate (1), minimally one buffer layer (2), minimally one nitride semiconductor layer (3, 4, 5, 6) applied onto the substrate (1) with epitaxy which is described by the AlyInxGa1- x- yN general formula where 0 ≤ x ≤1, 0 ≤ y ≤1 and 0 ≤ x+y ≤1 is valid, where minimally two nitride semiconductor layers (3, 4) are arranged in a layered heterostructure, whose structure contains minimally one potential well for radiant recombinations of electrons and holes. In the structure there is arranged minimally one active couple of nitride semiconductor layers (3, 4) of principally the same polarisation consisting of the barrier layer (4) of the AlybInxbGa1- xb-ybN type and from layer (5) of the AlywInxwGa1-xw- ywN type representing a potential well where xb ≤ xw and yb ≤ yw is valid, or there is minimally one carrier attracting layer (7) of the AlydInxdGa1-xd- ydN type with the thickness (t3) less than 2 nm in which yd ≤ yw and xd ≥ xw+0,3 inserted in minimally one active couple of nitride semiconductor layers (4, 5) to decrease the luminescence decay time.