| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can decrease the possibility of the occurrence of breakdown.SOLUTION: A semiconductor device according to an embodiment comprises: first conductivity type first semiconductor regions; second conductivity type second semiconductor regions; second conductivity type third semiconductor regions; second conductivity type fourth semiconductor regions; first conductivity type fifth semiconductor regions; and a gate electrode. Each first semiconductor region extends in a first direction. The plurality of first semiconductor regions are provided in a second direction orthogonal to the first direction. The first semiconductor regions and the second semiconductor regions are alternately provided in the second direction. The third semiconductor regions are provided on the second semiconductor regions. A concentration of a second conductivity type impurity in the third semiconductor region is higher than a concentration of a second conductivity type impurity in the second semiconductor region. The gate electrode is parallel with a plane including the first direction and the second direction and extends in a third direction crossing the first direction.SELECTED DRAWING: Figure 1 |
