| 摘要 |
1291428 Magnetic storage devices BUNKER RAMO CORP 8 Oct 1970 [8 Oct 1969] 47943/70 Heading H3B A plated wire memory comprises two conductor carrying plates 10, Fig. 4, shaped and positioned to provide tunnels 22 into which magnetic wires may be inserted. To make the memory, a plate 10, Fig. 1, which may be of beryllium copper, is etched to give grooves 12 which are then filled with a dielectric. The plate is then etched on its other face, Fig. 2, to define channels 18 and thereby form individual conductors 15 separated by the dielectric portions. Further channels 16 are etched perpendicular to the conductors so that when two plates are face to face the tunnels 22 of Fig. 4 are defined. As shown in Fig. 4, each pair of opposed conductors 15 is shielded from adjacent pairs by the remaining metallic portions of the sheets 10. A closed conductive circuit may be formed around each pair of conductors 15, Fig. 5A, by recessing the outer face of each conductor at 21, filling the recess with a dielectric, and joining the shielding portions 10A with a conductive layer 29. A magnetic layer 30 may be added. The magnetic wires used may be beryllium copper, coated in a magnetic field with a single domain thickness of Permalloy to give a circumferential easy axis. The wires are insulated by a thermoplastics dip. Some of the wires may lack the magnetic coating to act as noise cancelling dummies. The memory plates may be stacked to give a three dimensional store, Figs. 7-10 (not shown), preferably with built in sense, select and drive circuitry. |
