METHOD FOR FABRICATING GATE OF NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a gate of a non-volatile memory device is provided to form the gate by using a cobalt silicide layer. CONSTITUTION: A plurality of gate pattern(120) is formed on a semiconductor substrate(100). A spacer(130) of an oxide layer is formed on a sidewall of the gate pattern(120). A nitride layer(140) is formed on a whole surface of the above structure including the spacer(130). A space between the gate patterns(120) is buried by depositing an insulating material. An insulating layer(150a) is formed by performing a planarization process. A cobalt layer is formed thereon. A protective layer is formed on the above structure including the cobalt layer. A CoSi layer is formed by performing the first rapid thermal annealing process. The remaining cobalt and the protective layer are removed by using a wet etch method. A cobalt silicide layer(180') is formed by performing the second rapid thermal annealing process.