METHOD FOR FORMING OHMIC LAYER ON CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an ohmic layer on a contact of a semiconductor device is provided to minimize the amount of leakage current by improving a contact resistance of the semiconductor device. CONSTITUTION: An insulating layer(2) is formed on a silicon substrate(1). A contact is formed on the insulating layer(2) by performing a photo-lithography process and an etch process. A natural oxide layer is formed on an exposed surface of the silicon substrate(1). The natural oxide layer is removed by using a dry etch method or a wet etch method. The first titanium layer of the first thickness is deposited on a surface of the contact by using a low temperature CVD(Chemical Vapor Deposition) method. Chlorine components are removed from the titanium layer. The second titanium layer of the second thickness is deposited on the first titanium layer by using a high temperature CVD method. The first titanium layer is changed to a titanium silicide(7) by reaction between the silicon substrate(1) and the first titanium layer. A TiN layer(5) is formed on the first and the second titanium layers. An aluminium layer(6) is formed on the TiN layer(5).