| 摘要 |
PURPOSE:To obtain a semiconductor luminescent device having a low threshold value, high efficiency and high output, and furthermore, having a good far field pattern as well by a method wherein current is concentratedly run to the active region making a difference of resistivity among the InP layers on the (N) side and the active region is dropped in the V-shaped groove. CONSTITUTION:An N type InP layer 2 is deposited covering a striped protrusion on an N<+> type InP layer 1 having the striped protrusion with the N type InP layer 2 and as a semiconductor layer having a resistivity higher than that of the N<+> type InP layer 1. A V-shaped groove 6 is carved in the N type InP layer 2 on the striped protrusion in such a way as to reach into the N<+> type InP layer 1. This semiconductor luminescent device is made into a structure, wherein an N type InP layer 7, an InGaAsP layer to be used as an active layer 3 and a P type InP layer 4 are deposited in this groove 6. The light emission is performed by a double hetero-junction, which is constituted holding the active layer 3, which is the InGaAsP layer, between the N type InP layer 7 and the P type InP layer 4. |
