| 摘要 |
PURPOSE:To prevent a soft error from occurring by a method wherein a barrier semiconductor is formed of a first conductivity type layer compensated with impurities of the first conductivity type and the opposite second conductivity type. CONSTITUTION:A POS static memory is provided with an n-type Si substrate 11, a p-type well 12, and an n<+> impurity layer 13 of a memory node in which a memory cell information charge is stored. It comprises a gate electrode 19 of a memory cell transferring MOS, an n<+> impurity layer 15 connected with a data wire, and a p layer 14 partially compensated with an n-type impurity provided under a memory node By these processes, a barrier layer can be obtained which prevents influx of noise charges effectively even at the temperature lower than 100 deg.K.
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