| 摘要 |
PURPOSE:To improve alignment accuracy between a photo mask and a semiconductor wafer by forming an alignment mark on a semiconductor wafer, by forming an operating part which is at least wider than the above alignment mark on a photo resist film formed on this alignment mark, and then performing alignment of patterning being based on this alignment mark. CONSTITUTION:A first resist film 10 is applied to the entire surface and a resist pattern is formed being based on an alignment mark 7a. At this time, an opening part D is formed on the upper surface of a via metal 9 and an opening part E is formed at the upper part of the alignment mark 7a. Then, a second circuit pattern is wired on the first resist film 10. Then, a second resist film 12 is coated over the entire surface of the upper metal 11 by spin coating and resist pattern is formed being based on the alignment mark 7a. In this case, a strong signal is received by a photo detector at the opening part E. Thus, the resist film can be formed accurately at a specified position on patterning. |
