| 摘要 |
PURPOSE:To improve high frequency characteristics and to enable manufacture of a semiconductor element at a low cost by attaching a pellet to other wafer while covering a surface of the pellet by a resist and by removing the resist after forming a grounding metallic layer from a rear of the pellet. CONSTITUTION:After an operative region excepting a ground electrode of a semiconductor wafer 1 whose element processing is finished is covered with a resist 2, it is bonded to a tape 4 and cut into pellets 3 to be scribed and enlarged. Then, after a resist 5 is applied to another Si wafer 6, the pellets 3 are inverted upside down and bonded. The tape 4 is peeled thereafter. After 500Angstrom Ti and 2000Angstrom Au are deposited by sputtering to form metallic layers 7 on the rear surface of the pellets 3, the resists 5 and 2 are removed by etching. Each pellet 3 is mounted on a ground terminal of a package. A semiconductor element having a grounding metallic layer at a side thereof can be acquired readily in this way. |
